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Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 4, PP. 513-516, 2017
Date:
2017-03-01
DOI:
http://dx.doi.org/10.1109/LED.2017.2675544

Author Information

Name Institution
Ke ZengUniversity at Buffalo
Joshua S. WallaceUniversity at Buffalo
Christopher HeimburgerUniversity at Buffalo
K. SasakiNovel Crystal Technology, Inc.
A. KuramataNovel Crystal Technology, Inc.
Takekazu MasuiNovel Crystal Technology, Inc.
Joseph A. GardellaUniversity at Buffalo
Uttam SingisettiUniversity at Buffalo

Films

Plasma SiO2

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Substrates

Ga2O3

Notes

1081