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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge

Type:
Journal
Info:
Applied Physics Letters 110, 143505 (2017)
Date:
2017-03-23
DOI:
http://dx.doi.org/10.1063/1.4979789

Author Information

Name Institution
Neil A. MoserGeorge Mason University
Jonathan P. McCandlessKBRWyle
A. CrespoU.S. Air Force Research Laboratory
Kevin D. LeedyU.S. Air Force Research Laboratory
Andrew J. GreenKBRWyle
Eric R. HellerU.S. Air Force Research Laboratory
K. D. ChabakU.S. Air Force Research Laboratory
Nathalia PeixotoGeorge Mason University
Gregg H. JessenU.S. Air Force Research Laboratory

Films

Plasma HfO2

Hardware used: Unknown
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Diagnostic: -

Substrates

Ga2O3

Notes

1087