About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Graphene-based MMIC process development and RF passives design

Type:
Conference Proceedings
Info:
GeMiC 2015 - March 16-18, 2015, Nürnberg, Germany
Date:
2015-03-16
DOI:
http://dx.doi.org/10.1109/GEMIC.2015.7107813

Author Information

Name Institution
Abdelrahman AskarRWTH Aachen University
Ahmed HamedRWTH Aachen University
Mohamed SaeedRWTH Aachen University
Abhay A. SagadeApplied Micro and Optoelectronic (AMO) GmbH
Daniel NeumaierApplied Micro and Optoelectronic (AMO) GmbH
Renato NegraRWTH Aachen University

Films

Plasma Al2O3

Hardware used: Unknown
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: -
Diagnostic: -

Substrates

SiO2
Ti/Al

Notes

PEALD Al2O3 film for graphene-based MMIC process.
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