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Improved retention times in UTBOX nMOSFETs for 1T-DRAM applications

Type:
Journal
Info:
Solid-State Electronics, Volume 97, July 2014, Pages 30-37
Date:
2014-05-06
DOI:
http://dx.doi.org/10.1016/j.sse.2014.04.031

Author Information

Name Institution
K.R.A. SasakiUniversity of Sao Paulo

Films

Plasma TiN

Hardware used: Unknown
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

PEALD TiN for DRAM gate stack.
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