Schottky Barrier Height Reduction at Interface Between GZO Transparent Electrode and InP/InGaAs Structure by Zinc Driven-in Step and Nickel Oxide Insertion
Type:
Journal
Info:
IEEE Electron Device Letters (Volume:35, Issue: 12)
Date:
2014-10-14
Author Information
| Name | Institution |
|---|---|
| Yueh-Lin Lee | National Tsing Hua University |
Films
Film/Plasma Properties
Substrates
Notes
| PEALD Ga-doped ZnO as TCO electrode. |
| 283 |