N2O, Nitrous Oxide, CAS# 10024-97-2

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition using O2 plasma and N2O plasma
2Fast Flexible Plastic Substrate ZnO Circuits
3Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
4The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
5Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
6Low-Power Double-Gate ZnO TFT Active Rectifier
7The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
8The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
9Fast PEALD ZnO Thin-Film Transistor Circuits
10Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
11Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments
12The effects of plasma treatment on the thermal stability of HfO2 thin films
13Fabrication and Characterization of Flexible Thin Film Transistors on Thin Solution-Cast Substrates
14Oxide semiconductor thin film transistors on thin solution-cast flexible substrates
15Oxide TFT LC Oscillators on Glass and Plastic for Wireless Functions in Large-Area Flexible Electronic Systems
16Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
17Flexible Al2O3/plasma polymer multilayer moisture barrier films deposited by a spatial atomic layer deposition process
18Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas