TDMAH, TDMAHf, Tetrakis[DiMethylAmido]Hafnium, Tetrakis[DiMethylAmino]Hafnium, Hafnium Dimethylamide, [Me2N]4Hf, [(CH3)2N]4Hf, also CAS# 19782-68-4, CAS# 19962-11-9

Informational Websites

NumberWebsite
1https://pubchem.ncbi.nlm.nih.gov/compound/140609#section=Top

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2% Zr) TDMAH
2Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Tetrakis(dimethylamino)hafnium, 98+% (99.99+%-Hf, <0.2%-Zr) TDMAH, contained in 50 ml cylinder with high temperature valve for CVD/ALD
4EpiValenceHafnium dimethylamide
5Sigma-Aldrich, Co. LLCTetrakis(dimethylamido)hafnium(IV) ≥99.99%
6American ElementsTetrakis(dimethylamido)hafnium(IV)
7Apollo ScientificTetrakis(dimethylamino)hafnium(IV) 99.999%
8GelestHAFNIUM DIMETHYLAMIDE

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 44 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberCompositionTitle
1HfAlOxA comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
2HfAlOxTailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
3HfNxCharacteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition
4HfNxEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
5HfNxHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
6HfO2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
7HfO2A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
8HfO2Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
9HfO2Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
10HfO2AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
11HfO2Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
12HfO2Characterization of hafnium oxide resistive memory layers deposited on copper by atomic layer deposition
13HfO2Damage evaluation in graphene underlying atomic layer deposition dielectrics
14HfO2Effect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
15HfO2Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
16HfO2Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
17HfO2Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
18HfO2Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
19HfO2HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
20HfO2High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
21HfO2Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
22HfO2Improving Thermal Stability and Interface State Density of High-k Stacks by Incorporating Hf into an Interfacial Layer on p-Germanium
23HfO2In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
24HfO2Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications
25HfO2Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
26HfO2Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
27HfO2Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
28HfO2Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
29HfO2Smart Surface for Elution of Protein-Protein Bound Particles: Nanonewton Dielectrophoretic Forces Using Atomic Layer Deposited Oxides
30HfO2Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
31HfO2Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
32HfO2Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
33HfO2Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
34HfOFEffects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
35HfONCharacterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
36HfONEnhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H2 and NH3 plasma treated interfacial layers
37HfONHfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
38HfSiOxAnnealing behavior of ferroelectric Si-doped HfO2 thin films
39HfSiOxEffect of deposition conditions and composition on band offsets in atomic layer deposited HfxSi1-xOy on InGaZnO4
40HfSiOxFerroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
41HfSiOxInfluence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
42HfSiOxTaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
43HfSiOxThe effects of layering in ferroelectric Si-doped HfO2 thin films
44HfTiNEffective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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