| 1 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
| 2 | In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics |
| 3 | Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers |
| 4 | Low temperature growth of Beryllium Oxide thin films prepared via plasma enhanced atomic layer deposition |
| 5 | Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor |
| 6 | Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films |
| 7 | Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment |
| 8 | Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition |
| 9 | Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors |
| 10 | Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 11 | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments |
| 12 | Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment |
| 13 | Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium |
| 14 | Increment of dielectric properties of SrTiO3 thin films by SrO interlayer on Ru bottom electrodes |
| 15 | Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric |
| 16 | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor |
| 17 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 18 | Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition |
| 19 | Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition |
| 20 | Suppression of GeOx interfacial layer and enhancement of the electrical performance of the high-K gate stack by the atomic-layer-deposited AlN buffer layer on Ge metal-oxide-semiconductor devices |
| 21 | Carbon content control of silicon oxycarbide film with methane containing plasma |
| 22 | Growth behavior and film properties of titanium dioxide by plasma-enhanced atomic layer deposition with discrete feeding method |
| 23 | Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma |
| 24 | Interaction of hydrogen with hafnium dioxide grown on silicon dioxide by the atomic layer deposition technique |
| 25 | Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD |
| 26 | A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors |
| 27 | Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
| 28 | Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD |
| 29 | Improvement of smooth surface of RuO2 bottom electrode on Al2O3 buffer layer and characteristics of RuO2/TiO2/Al2O3/TiO2/RuO2 capacitors |
| 30 | The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD |
| 31 | An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD |
| 32 | Effect of Plasma on Characteristics of Zirconium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 33 | Effect of plasma and heat treatment on silicon dioxide films by plasma-enhanced atomic layer deposition |
| 34 | Advances in the fabrication of graphene transistors on flexible substrates |
| 35 | Pentacene-Thin Film Transistors with ZrO2 Gate Dielectric Layers Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 36 | Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode |
| 37 | Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films |
| 38 | Flexible insulator of hollow SiO2 spheres and polyimide hybrid for flexible OLED |
| 39 | Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide |
| 40 | Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon |
| 41 | Graphene-based MMIC process development and RF passives design |
| 42 | Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition |
| 43 | Ag films grown by remote plasma enhanced atomic layer deposition on different substrates |
| 44 | Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties |
| 45 | High Energy Density Capacitor By Plasma-Treated ALD BaTiO3 Thin Films |
| 46 | Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C |
| 47 | Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films |
| 48 | Electrical properties of Ga2O3-based dielectric thin films prepared by plasma enhanced atomic layer deposition (PEALD) |
| 49 | In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides |
| 50 | Growth characteristics and film properties of plasma-enhanced and thermal atomic-layer-deposited magnesium oxide thin films prepared using bis(ethylcyclopentadienyl)magnesium precursor |
| 51 | Suppression of interfacial layer in high-K gate stack with crystalline high-K dielectric and AlN buffer layer structure |
| 52 | Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition |
| 53 | Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates |
| 54 | Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen |
| 55 | Improved dielectric properties of BeO thin films grown by plasma enhanced atomic layer deposition |
| 56 | Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma |
| 57 | Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric |
| 58 | Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition |
| 59 | TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition |
| 60 | Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes |
| 61 | Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric |
| 62 | Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments |
| 63 | Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors |
| 64 | Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition |
| 65 | Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films |
| 66 | Investigation and optimization of HfO2 gate dielectric on N-polar GaN: Impact of surface treatments, deposition, and annealing conditions |
| 67 | TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films |
| 68 | Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks |
| 69 | Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films |
| 70 | Characteristics of TiO2 Films Prepared by ALD With and Without Plasma |
| 71 | Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation |
| 72 | Electrical Properties of Al2O3 Films Grown by the Electron Cyclotron Resonance Plasma-Enhanced Atomic Layer Deposition (ECR-PEALD) and Thermal ALD Methods |
| 73 | Characteristics of Hf-silicate thin films synthesized by plasma enhanced atomic layer deposition |
| 74 | Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid |
| 75 | Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition |
| 76 | Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition |
| 77 | Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering |
| 78 | Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition |
| 79 | Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics |
| 80 | Growth of rutile-TiO2 thin films via Sn doping and insertion of ultra-thin SnO2 interlayer by atomic layer deposition |
| 81 | Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications |
| 82 | Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes |
| 83 | Dielectric properties investigation of a compound based on atomic layer deposited multi-layer structure |
| 84 | Plasma enhanced atomic layer deposition of SiNx:H and SiO2 |
| 85 | Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage |
| 86 | Plasma-enhanced atomic layer deposition of SiO2 for channel isolation of colloidal quantum dots phototransistors |
| 87 | High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD |
| 88 | Plasma-enhanced atomic layer deposition of hafnium silicate thin films using a single source precursor |
| 89 | Structural and electrical properties of AlN thin films on GaN substrates grown by plasma enhanced-Atomic Layer Deposition |
| 90 | Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films |
| 91 | Densification of Thin Aluminum Oxide Films by Thermal Treatments |
| 92 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 93 | Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures |
| 94 | Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition |
| 95 | PEALD of HfO2 Thin Films: Precursor Tuning and a New Near-Ambient-Pressure XPS Approach to in Situ Examination of Thin-Film Surfaces Exposed to Reactive Gases |
| 96 | Uniform Growth of Sub-5-Nanometer High-κ Dielectrics on MoS2 Using Plasma-Enhanced Atomic Layer Deposition |
| 97 | Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition |
| 98 | Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer |
| 99 | Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures |
| 100 | Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils |
| 101 | Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device |
| 102 | Direct plasma-enhanced atomic layer deposition of aluminum nitride for water permeation barriers |
| 103 | Atomic Layer Deposition of Al2O3 Thin Films for Metal Insulator Semiconductor Applications on 4H-SiC |
| 104 | Atomic Layer Deposition and Electrical Properties of SrTiO3 Thin Films Grown Using Sr(C11H19O2)2, Ti(Oi-C3H7)4, and H2O |
| 105 | Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation |
| 106 | Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD) |
| 107 | Enhanced Dielectric Properties of SrTiO3 Films with a SrRuO3 Seed by Plasma-Enhanced Atomic Layer Deposition |
| 108 | Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si |
| 109 | Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors |
| 110 | Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition |
| 111 | Nanolaminated Al2O3/HfO2 dielectrics for silicon carbide based devices |
| 112 | Propagation Effects in Carbon Nanoelectronics |
| 113 | Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition |
| 114 | Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage |
| 115 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 116 | A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition |
| 117 | Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition |
| 118 | AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing |
| 119 | Fast PEALD ZnO Thin-Film Transistor Circuits |
| 120 | Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface |
| 121 | Annealing behavior of ferroelectric Si-doped HfO2 thin films |
| 122 | Comparison of plasma-enhanced atomic layer deposition AlN films prepared with different plasma sources |
| 123 | Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition |
| 124 | Plasma Enhanced Atomic Layer Deposition of SiN:H Using N2 and Silane |
| 125 | Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 126 | Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition |
| 127 | Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition |
| 128 | Comparative study of structural electrical dielectric and ferroelectric properties of HfO2 deposited by plasma-enhanced atomic layer deposition and radio frequency sputtering technique for the application in 1-T FeFET |
| 129 | Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition |
| 130 | Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study |
| 131 | Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors |
| 132 | Sub-7-nm textured ZrO2 with giant ferroelectricity |
| 133 | Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition |
| 134 | Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode |
| 135 | Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method |
| 136 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films |
| 137 | Characterization of Molybdenum Oxide Thin Films Grown by Atomic Layer Deposition |
| 138 | Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry |
| 139 | Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor |
| 140 | Very high frequency plasma reactant for atomic layer deposition |
| 141 | Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate |
| 142 | Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal |
| 143 | Remote Plasma ALD of Platinum and Platinum Oxide Films |
| 144 | Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes |
| 145 | PEALD of Zirconium Oxide Using Tetrakis(ethylmethylamino)zirconium and Oxygen |
| 146 | Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage |
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