Chemical Composition, Impurities Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
4A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
5A New Pulse Plasma Enhanced Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier for Copper Interconnect
6A rotary reactor for thermal and plasma-enhanced atomic layer deposition on powders and small objects
7A route to low temperature growth of single crystal GaN on sapphire
8A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
9Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
10Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
11ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
12ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
13ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
14ALD-grown Ultrathin AlN Film for Passivation of AlGaN/GaN HEMTs
15Alloyed 2D Metal-Semiconductor Atomic Layer Junctions
16AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition
17Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
18Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
19An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
20An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
21An ultra-thin SiO2 ALD layer for void-free bonding of III-V material on silicon
22Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
23Analysis of nitrogen species in titanium oxynitride ALD films
24Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
25Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
26Atmospheric pressure plasma enhanced spatial ALD of silver
27Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
28Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
29Atomic layer deposited self-forming Ru-Mn diffusion barrier for seedless Cu interconnects
30Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
31Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
32Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges
33Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
34Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
35Atomic layer deposition of Co3O4 on carbon nanotubes/carbon cloth for high-capacitance and ultrastable supercapacitor electrode
36Atomic Layer Deposition of Copper Seed Layers from a (hfac)Cu(VTMOS) Precursor
37Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
38Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
39Atomic layer deposition of GaN at low temperatures
40Atomic Layer Deposition of Gold Metal
41Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
42Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
43Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
44Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
45Atomic Layer Deposition of Niobium Nitride from Different Precursors
46Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
47Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
48Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
49Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
50Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
51Atomic Layer Deposition of the Solid Electrolyte LiPON
52Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
53Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
54Atomic layer deposition of titanium nitride from TDMAT precursor
55Atomic layer deposition of ultrathin blocking layer for low-temperature solid oxide fuel cell on nanoporous substrate
56Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
57Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
58Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement
59Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
60Barrier Characteristics of ZrN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Using Tetrakis(diethylamino)zirconium Precursor
61Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
62Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx:H stacks
63Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
64Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
65Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
66Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
67Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
68Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
69Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
70Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma ALD Method Using Cyclopentadienylcobalt Dicarbonyl
71Characteristics of TiN Films Deposited by Remote Plasma-Enhanced Atomic Layer Deposition Method
72Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
73Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
74Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
75Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
76Charge Transport through Organic Molecular Wires Embedded in Ultrathin Insulating Inorganic Layer
77Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
78Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
79Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
80Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl [CpCo(CO)2] and Dicobalt Octacarbonyl [Co2(CO)8]
81Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
82Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
83Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
84Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
85Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
86Composite materials and nanoporous thin layers made by atomic layer deposition
87Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
88Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
89Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
90Controlled erbium incorporation and photoluminescence of Er-doped Y2O3
91Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
92Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
93Copper-ALD Seed Layer as an Enabler for Device Scaling
94Correlation of carbon content with the thermal stability of ruthenium deposited by using RF-direct plasma-enhanced atomic-layer deposition
95Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
96Coupled used of SKP and C-V measurements to highlight the charge distribution and behavior in the Si/SiO2/Al2O3 stack for silicon solar cells surface passivation
97Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
98Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
99Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
100Damage evaluation in graphene underlying atomic layer deposition dielectrics
101Degradation of the deposition blocking layer during area-selective plasma-enhanced atomic layer deposition of cobalt
102Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
103Densification of Thin Aluminum Oxide Films by Thermal Treatments
104Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
105Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
106Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
107Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
108Development of plasma-enhanced atomic layer deposition grown Ru-WCN mixed phase films for nanoscale diffusion barrier and copper direct-plate applications
109Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
110Direct Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
111Effect of anode morphology on the performance of thin film solid oxide fuel cell with PEALD YSZ electrolyte
112Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
113Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET
114Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
115Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
116Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
117Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
118Effect of Reaction Mechanism on Precursor Exposure Time in Atomic Layer Deposition of Silicon Oxide and Silicon Nitride
119Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
120Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
121Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
122Effect of Thermal Annealing on La2O3 Films Grown by Plasma Enhanced Atomic Layer Deposition
123Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
124Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
125Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
126Effects of carbon contaminations on Y2O3-stabilized ZrO2 thin film electrolyte prepared by atomic layer deposition for thin film solid oxide fuel cells
127Effects of Cl-Based Ligand Structures on Atomic Layer Deposited HfO2
128Effects of Fluorine Plasma Treatment on the Electronic Structure of Plasma-Enhanced Atomic Layer Deposition HfO2
129Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
130Effects of NH3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier
131Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
132Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
133Electrical and chemical characterization of Al2O3 passivation layer deposited by plasma-assisted atomic layer deposition in c-Si solar cells
134Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition
135Electrical properties of SrTa2O6 thin films by plasma enhanced atomic layer deposition (PEALD)
136Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
137Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
138Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
139Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
140Enhanced electron field emission properties of high aspect ratio silicon nanowire-zinc oxide core-shell arrays
141Enhanced Methanol Oxidation with Annealed Atomic Layer Deposited Platinum Nanoparticles on Carbon Nanotubes
142Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
143Enhanced Step Coverage of TiO2 Deposited on High Aspect Ratio Surfaces by Plasma-Enhanced Atomic Layer Deposition
144Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
145Enhancement of Electrical Characteristics and Reliability in Crystallized ZrO2 Gate Dielectrics Treated with In-Situ Atomic Layer Doping of Nitrogen
146Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
147Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
148Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
149Evaluation of plasma parameters on PEALD deposited TaCN
150Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
151Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
152Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
153Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
154Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
155Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
156Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
157Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
158Firing Stable Al2O3/SiNx Layer Stack Passivation for the Front Side Boron Emitter of n-type Silicon Solar Cells
159Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
160Flexible Memristive Memory Array on Plastic Substrates
161Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
162Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
163Fully CMOS-compatible titanium nitride nanoantennas
164GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
165Gadolinium nitride films deposited using a PEALD based process
166GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
167Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
168Growth and Characterization of Metastable Hexagonal Nickel Thin Films via Plasma-Enhanced Atomic Layer Deposition
169Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
170Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
171Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
172Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
173Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition
174Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
175Growth mechanism of Co thin films formed by plasma-enhanced atomic layer deposition using NH3 as plasma reactant
176Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
177Growth of amorphous zinc tin oxide films using plasma-enhanced atomic layer deposition from bis(1-dimethylamino-2-methyl-2propoxy)tin, diethylzinc, and oxygen plasma
178Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
179HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer
180High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors
181High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
182High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
183High-Mobility Indium Oxide Thin-Film Transistors by Means of Plasma-Enhanced Atomic Layer Deposition
184High-Quality Cobalt Thin Films by Plasma-Enhanced Atomic Layer Deposition
185High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
186High-Reflective Coatings For Ground and Space Based Applications
187Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-ALD
188Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
189Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
190Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
191Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
192Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
193Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
194Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
195Hydrogen plasma-enhanced atomic layer deposition of copper thin films
196Hydrophilic/hydrophobic surface of Al2O3 thin films grown by thermal and plasma-enhanced atomic layer deposition on plasticized polyvinyl chloride (PVC)
197Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
198Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon
199Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
200Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
201Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches
202Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
203Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
204Improved stability of electrical properties of nitrogen-added Al2O3 films grown by PEALD as gate dielectric
205Improved understanding of recombination at the Si/Al2O3 interface
206Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition
207Improving the stability of atomic layer deposited alumina films in aqueous environments with metal oxide capping layers
208In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics
209In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
210In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices
211In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
212In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
213In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
214In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
215Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
216Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
217Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
218Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
219Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
220Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
221Influence of Substrate on Hafnium Silicate Metal-Insulator-Metal Capacitors Grown by Atomic Layer Deposition
222Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
223Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
224Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3
225Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
226Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
227Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
228Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
229Initiation of atomic layer deposition of metal oxides on polymer substrates by water plasma pretreatment
230Integrated Semiconductor/Catalyst Assemblies for Sustained Photoanodic Water Oxidation
231Integration of Atomic Layer Deposition-Grown Copper Seed Layers for Cu Electroplating Applications
232Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C-V
233Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
234Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning
235Interfacial and electrical properties of Al2O3/HfO2 bilayer deposited by atomic layer deposition on GeON passivated germanium surface
236Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with In Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition
237Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
238Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
239Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition
240Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
241Investigation of ultra-thin titania films as hole-blocking contacts for organic photovoltaics
242Large area photoelectrodes based on hybrids of CNT fibres and ALD-grown TiO2
243Large-area plasmonic hot-spot arrays: sub-2 nm interparticle separations with plasma-enhanced atomic layer deposition of Ag on periodic arrays of Si nanopillars
244Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
245Local Electronic Structures and Electrical Characteristics of Well-Controlled Nitrogen-Doped ZnO Thin Films Prepared by Remote Plasma In situ Atomic Layer Doping
246Long-Term Bilayer Encapsulation Performance of Atomic Layer Deposited Al2O3 and Parylene C for Biomedical Implantable Devices
247Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
248Low sheet resistance titanium nitride films by low-temperature plasma-enhanced atomic layer deposition using design of experiments methodology
249Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
250Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
251Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
252Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
253Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
254Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
255Low temperature temporal and spatial atomic layer deposition of TiO2 films
256Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
257Low-temperature (≤200°C) plasma enhanced atomic layer deposition of dense titanium nitride thin films
258Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
259Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
260Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
261Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
262Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
263Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
264Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
265Low-Temperature Deposition of Hexagonal Boron Nitride Via Sequential Injection of Triethylboron and N2/H2 Plasma
266Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
267Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
268Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
269Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
270Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
271Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
272Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
273Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
274Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
275Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
276Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
277Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
278Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
279Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing
280MANOS performance dependence on ALD Al2O3 oxidation source
281Mechanical, structural, and optical properties of PEALD metallic oxides for optical applications
282Metallic Copper Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition of Air Stable Precursors
283Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
284Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect
285Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
286Microstructure analysis of plasma enhanced atomic layer deposition-grown mixed-phase RuTaN barrier for seedless copper electrodeposition
287Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
288Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
289Nitride mediated epitaxy of CoSi2 through self-interlayer-formation of plasma-enhanced atomic layer deposition Co
290Nitride memristors
291Nitride passivation of the interface between high-k dielectrics and SiGe
292Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
293Nucleation and growth characteristics of electroplated Cu on plasma enhanced atomic layer deposition-grown RuTaN direct plate barriers
294Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
295Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
296On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
297Optical and Electrical Properties of TixSi1-xOy Films
298Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
299Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition
300Oxidation precursor dependence of atomic layer deposited Al2O3 films in a-Si:H(i)/Al2O3 surface passivation stacks
301Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
302Oxygen migration in TiO2-based higher-k gate stacks
303Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops
304PEALD AlN: controlling growth and film crystallinity
305PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
306PEALD of Copper using New Precursors for Next Generation of Interconnections
307PEALD ZrO2 Films Deposition on TiN and Si Substrates
308Perspectives on future directions in III-N semiconductor research
309Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
310Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
311Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
312Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
313Photoelectrochemical hydrogen production on silicon microwire arrays overlaid with ultrathin titanium nitride
314Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
315Plasma enhanced atomic layer deposition of aluminum sulfide thin films
316Plasma enhanced atomic layer deposition of Fe2O3 thin films
317Plasma enhanced atomic layer deposition of Ga2O3 thin films
318Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
319Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
320Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
321Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
322Plasma enhanced atomic layer deposition of SiNx:H and SiO2
323Plasma enhanced atomic layer deposition of SrTiO3 thin films with Sr(tmhd)2 and Ti(i-OPr)4
324Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
325Plasma enhanced atomic layer deposition of zinc sulfide thin films
326Plasma Enhanced Atomic Layer Deposition on Powders
327Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
328Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
329Plasma nitridation of atomic layer deposition (ALD) Al2O3 by NH3 in plasma-enhanced chemical vapor deposition (PECVD) for silicon solar cell
330Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
331Plasma-assisted ALD to functionalize PET: towards new generation flexible gadgets
332Plasma-assisted and thermal atomic layer deposition of electrochemically active Li2CO3
333Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors
334Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
335Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
336Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
337Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory
338Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
339Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
340Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
341Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering
342Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
343Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
344Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
345Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
346Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
347Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
348Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
349Plasma-enhanced atomic layer deposition for plasmonic TiN
350Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
351Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
352Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation
353Plasma-enhanced atomic layer deposition of BaTiO3
354Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
355Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
356Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
357Plasma-Enhanced Atomic Layer Deposition of Nanoscale Yttria-Stabilized Zirconia Electrolyte for Solid Oxide Fuel Cells with Porous Substrate
358Plasma-Enhanced Atomic Layer Deposition of Ni
359Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
360Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
361Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
362Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
363Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
364Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
365Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
366Plasma-enhanced atomic layer deposition of superconducting niobium nitride
367Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
368Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
369Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
370Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
371Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
372Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
373Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
374Plasma-enhanced atomic layer deposition of tungsten nitride
375Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma
376Plasma-Enhanced Atomic Layer Deposition of Ultrathin Oxide Coatings for Stabilized Lithium-Sulfur Batteries
377Plasma-enhanced atomic layer deposition: a gas-phase route to hydrophilic, glueable polytetrafluoroethylene
378Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
379Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
380Practical Challenges of Processing III-Nitride/Graphene/SiC Devices
381Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
382Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
383Properties of AlN grown by plasma enhanced atomic layer deposition
384Properties of HfAlO film deposited by plasma enhanced atomic layer deposition
385Properties of nanostructured undoped ZrO2 thin film electrolytes by plasma enhanced atomic layer deposition for thin film solid oxide fuel cells
386Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
387Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
388Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
389Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
390Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
391Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
392Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
393Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
394Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration
395Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
396Remote Plasma ALD of Platinum and Platinum Oxide Films
397Remote plasma atomic layer deposited Al2O3 4H-SiC MOS capacitor with remote H2 plasma passivation and post metallization annealing
398Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
399Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
400Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
401Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications
402Resistive switching properties of plasma enhanced-ALD La2O3 for novel nonvolatile memory application
403Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
404Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
405Room temperature atomic layer deposition of TiO2 on gold nanoparticles
406Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
407Room-Temperature Atomic Layer Deposition of Platinum
408RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
409RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
410Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
411Ru thin film grown on TaN by plasma enhanced atomic layer deposition
412Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
413Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
414Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
415Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
416Self-Limiting Growth of GaN at Low Temperatures
417Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
418Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
419Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
420Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance
421Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
422Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
423Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
424Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
425Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
426Stability of Al2O3 and Al2O3/a-Six:H stacks for surface passivation of crystalline silicon
427Stabilization of Lithium Metal Anodes by Hybrid Artificial Solid Electrolyte Interphase
428Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
429Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
430Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
431Structural and optical characterization of low-temperature ALD crystalline AlN
432Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
433Structural investigation of Ru/Pt nanocomposite films prepared by plasma-enhanced atomic layer depositions
434Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
435Structure of Ru/Pt Nanocomposite Films Fabricated by Plasma-Enhanced Atomic Layer Depositions
436Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
437Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
438Study on the characteristics of aluminum thin films prepared by atomic layer deposition
439Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1-xHfxO2 Thin Film without Using Noble Metal Electrode
440Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
441Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
442Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
443Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
444Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
445Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition
446Surface engineering of nanoporous substrate for solid oxide fuel cells with atomic layer-deposited electrolyte
447Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
448Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
449Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
450Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
451TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
452Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
453Template-Based Synthesis of Aluminum Nitride Hollow Nanofibers Via Plasma-Enhanced Atomic Layer Deposition
454Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
455The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
456The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer
457The effects of layering in ferroelectric Si-doped HfO2 thin films
458The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition
459The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
460The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
461The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
462The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
463The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
464The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
465Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
466Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
467Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
468Thin effective oxide thickness (~0.5 nm) and low leakage current gate dielectric for Ge MOS devices by plasma nitrided Al2O3 intermediate layer
469Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
470TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD
471Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests
472TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition
473Trilayer Tunnel Selectors for Memristor Memory Cells
474Tris(dimethylamido)aluminum(III): An overlooked atomic layer deposition precursor
475Tunable Electrical Properties of Vanadium Oxide by Hydrogen-Plasma-Treated Atomic Layer Deposition
476Tuning The Photoactivity of Zirconia Nanotubes-Based Photoanodes via Ultrathin Layers of ZrN: An Effective Approach toward Visible-Light Water Splitting
477Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
478Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
479Ultraviolet Electroluminescence from Nitrogen-Doped ZnO-Based Heterojuntion Light-Emitting Diodes Prepared by Remote Plasma in situ Atomic Layer-Doping Technique
480Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
481Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
482Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
483Understanding the Oxygen Evolution Reaction Mechanism on CoOx using Operando Ambient-Pressure X-ray Photoelectron Spectroscopy
484Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
485Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
486Using top graphene layer as sacrificial protection during dielectric atomic layer deposition
487Wafer-scale, conformal and direct growth of MoS2 thin films by atomic layer deposition
488Wetting transitions of polymers via thermal and plasma enhanced atomic layer depositions
489Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
490X-ray Photoelectron Spectroscopy Analyses of Atomic Layer Deposition-Prepared Titanium-Dioxide Thin Films with Oxygen Sources and Their Annealing Effect
491ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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