Thickness Plasma Enhanced Atomic Layer Deposition Publications

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NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors
3A comparison between remote plasma-enhanced and thermal ALD of Hafnium-nitride thin films
4A controlled growth of WNx and WCx thin films prepared by atomic layer deposition
5A low-temperature-grown TiO2 -based device for the flexible stacked RRAM application
6A route to low temperature growth of single crystal GaN on sapphire
7Advanced thin conformal Al2O3 films for high aspect ratio mercury cadmium telluride sensors
8Advances in the fabrication of graphene transistors on flexible substrates
9Ag films grown by remote plasma enhanced atomic layer deposition on different substrates
10Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing
11ALD ruthenium oxide-carbon nanotube electrodes for supercapacitor applications
12ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
13ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
14Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
15Aluminum oxide – n-Si field effect inversion layer solar cells with organic top contact
16Amorphous alumina thin films deposited on titanium: Interfacial chemistry and thermal oxidation barrier properties
17An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
18An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor
19An improvement of HfO2/Ge interface by in situ remote N2 plasma pretreatment for Ge MOS devices
20Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
21Analysis of nitrogen species in titanium oxynitride ALD films
22Antireflection Coatings for Strongly Curved Glass Lenses by Atomic Layer Deposition
23Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition
24Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition
25Atmospheric pressure plasma enhanced spatial ALD of silver
26Atomic layer controlled deposition of silicon nitride with self-limiting mechanism
27Atomic layer deposited (ALD) SnO2 anodes with exceptional cycleability for Li-ion batteries
28Atomic layer deposited Al2O3 and parylene C dual-layer encapsulation for biomedical implantable devices
29Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization
30Atomic Layer Deposition and In-situ Characterization of Ultraclean Lithium Oxide and Lithium Hydroxide
31Atomic layer deposition by reaction of molecular oxygen with tetrakisdimethylamido-metal precursors
32Atomic layer deposition growth of a novel mixed-phase barrier for seedless copper electroplating applications
33Atomic Layer Deposition of Aluminum Phosphate Based on the Plasma Polymerization of Trimethyl Phosphate
34Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma
35Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization
36Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors
37Atomic layer deposition of GaN at low temperatures
38Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma
39Atomic Layer Deposition of High-Purity Palladium Films from Pd(hfac)2 and H2 and O2 Plasmas
40Atomic Layer Deposition of LiCoO2 Thin-Film Electrodes for All-Solid-State Li-Ion Micro-Batteries
41Atomic layer deposition of molybdenum oxide from (NtBu)2(NMe2)2Mo and O2 plasma
42Atomic Layer Deposition of Niobium Nitride from Different Precursors
43Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing
44Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
45Atomic Layer Deposition of Ru Thin Films Using a New Beta-Diketonate Ru Precursor and NH3 Plasma as a Reactant
46Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
47Atomic Layer Deposition of Ruthenium and Ruthenium-oxide Thin Films by Using a Ru(EtCp)2 Precursor and Oxygen Gas
48Atomic Layer Deposition of Silicon Nitride from Bis(tert-butylamino)silane and N2 Plasma
49Atomic Layer Deposition of Silicon Nitride from Bis(tertiary-butyl-amino)silane and N2 Plasma Studied by in Situ Gas Phase and Surface Infrared Spectroscopy
50Atomic Layer Deposition of the Solid Electrolyte LiPON
51Atomic layer deposition of TiN for the fabrication of nanomechanical resonators
52Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries
53Atomic layer deposition of titanium nitride from TDMAT precursor
54Atomic Layer Deposition of Ultrathin Crystalline Epitaxial Films of V2O5
55Atomic Layer Deposition of Wet-Etch Resistant Silicon Nitride Using Di(sec-butylamino)silane and N2 Plasma on Planar and 3D Substrate Topographies
56Atomic layer epitaxy for quantum well nitride-based devices
57Atomic-layer-deposited silver and dielectric nanostructures for plasmonic enhancement of Raman scattering from nanoscale ultrathin films
58AxBAxB... pulsed atomic layer deposition: Numerical growth model and experiments
59Capacitance and conductance versus voltage characterization of Al2O3 layers prepared by plasma enhanced atomic layer deposition at 25°C<T<200°C
60Capacitance-voltage characteristics of gamma irradiated Al2O3, HfO2, and SiO2 thin films grown by plasma-enhanced atomic layer deposition
61Catalytic Combustion and Dehydrogenation Reactions during Atomic Layer Deposition of Platinum
62Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
63Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
64Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma
65Characteristics of Cobalt Thin Films Deposited by Remote Plasma ALD Method with Dicobalt Octacarbonyl
66Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
67Characteristics of Nickel Thin Film and Formation of Nickel Silicide by Remote Plasma Atomic Layer Deposition using Ni(iPr-DAD)2
68Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
69Characteristics of Tungsten Carbide Films Prepared by Plasma-Assisted ALD Using Bis(tert-butylimido)bis(dimethylamido)tungsten
70Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier
71Characteristics of ZrO2 gate dielectric deposited using Zr(t –butoxide) and Zr(NEt2)4 precursors by plasma enhanced atomic layer deposition method
72Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
73Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide
74Chemical Reaction Mechanism in the Atomic Layer Deposition of TaCxNy Films Using tert-Butylimidotris(diethylamido)tantalum
75Co3O4 as Anode Material for Thin Film µBatteries prepared by Remote Plasma Atomic Layer Deposition
76Comparative study of ALD SiO2 thin films for optical applications
77Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant
78Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates
79Comparison of Thermal and Plasma-Enhanced ALD/CVD of Vanadium Pentoxide
80Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
81Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor
82Composite materials and nanoporous thin layers made by atomic layer deposition
83Conformal Fe, Co and Ni Films from Oxides and Nitrides Grown by Atomic Layer Deposition
84Conformality of Al2O3 and AlN Deposited by Plasma-Enhanced Atomic Layer Deposition
85Conformality of remote plasma-enhanced atomic layer deposition processes: An experimental study
86Controllable nitrogen doping in as deposited TiO2 film and its effect on post deposition annealing
87Controllable synthesis of molybdenum tungsten disulfide alloy for vertically composition-controlled multilayer
88Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition
89Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition
90Copper-ALD Seed Layer as an Enabler for Device Scaling
91Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride
92Corrosion barriers for silver-based telescope mirrors: comparative study of plasma-enhanced atomic layer deposition and reactive evaporation of aluminum oxide
93Crystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition
94Crystalline growth of AlN thin films by atomic layer deposition
95Crystallization Study by Transmission Electron Microscopy of SrTiO3 Thin Films Prepared by Plasma-Assisted ALD
96Current transport mechanisms in plasma-enhanced atomic layer deposited AlN thin films
97Damage evaluation in graphene underlying atomic layer deposition dielectrics
98DC characteristics of ALD-grown Al2O3/AlGaN/GaN MIS-HEMTs and HEMTs at 600°C in air
99Densification of Thin Aluminum Oxide Films by Thermal Treatments
100Deposition of Al2O3 by Using ECR-ALD for Organic Substrate Devices
101Deposition of copper by plasma-enhanced atomic layer deposition using a novel N-Heterocyclic carbene precursor
102Deposition Of MnO Anode And MnO2 Cathode Thin Films By Plasma Enhanced Atomic Layer Deposition Using The Mn(thd)3 Precursor
103Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
104Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition
105Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
106Effect of an Al2O3/TiO2 Passivation Layer on the Performance of Amorphous Zinc-Tin Oxide Thin-Film Transistors
107Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
108Effect of hydrogen peroxide pretreatment on ZnO-based metal-semiconductor-metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition
109Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
110Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
111Effect of Sr-Ruthenate Seed Layer on Dielectric Properties of SrTiO3 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
112Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
113Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
114Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
115Effects of Fast Neutrons on the Electromechanical Properties of Materials Used in Microsystems
116Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
117Effects of surface nature of different semiconductor substrates on the plasma enhanced atomic layer deposition growth of Al2O3 gate dielectric thin films
118Electrical characteristics of β-Ga2O3 thin films grown by PEALD
119Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
120Electrically Excited Plasmonic Nanoruler for Biomolecule Detection
121Electron Cyclotron Resonance Plasma-Assisted Atomic Layer Deposition of Amorphous Al2O3 Thin Films
122Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
123Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
124Ellipsometry and XPS comparative studies of thermal and plasma enhanced atomic layer deposited Al2O3-films
125Emerging Atomic Layer Deposition (ALD) Processes For Low Thermal Budget Flexible Electronics
126Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films
127Enhanced photocatalytic performance in atomic layer deposition grown TiO2 thin films via hydrogen plasma treatment
128Enhancement of barrier properties of aluminum oxide layer by optimization of plasma-enhanced atomic layer deposition process
129Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
130Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy
131Evaluation of plasma parameters on PEALD deposited TaCN
132Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs
133Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification
134Examining the role of hydrogen in the electrical performance of in situ fabricated metal-insulator-metal trilayers using an atomic layer deposited Al2O3 dielectric
135Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
136Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
137Fabrication of AlN/BN bishell hollow nanofibers by electrospinning and atomic layer deposition
138Fast PEALD ZnO Thin-Film Transistor Circuits
139Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
140Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
141Film properties of low temperature HfO2 grown with H2O, O3, or remote O2-plasma
142Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
143Formation of Tantalum Carbide and Nitride Phases in Atomic Layer Deposition Using Hydrogen Plasma and tert-Butylimidotris( diethylamido)-tantalum (TBTDET), and its Effect on Material Properties
144Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
145GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride
146Gadolinium nitride films deposited using a PEALD based process
147GaN metal-insulator-semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation
148Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition
149Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
150Graphene-based MMIC process development and RF passives design
151Growing aluminum nitride films by Plasma-Enhanced Atomic Layer Deposition at low temperatures
152Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
153Growth and characterization of titanium oxide by plasma enhanced atomic layer deposition
154Growth behavior and structural characteristics of TiO2 thin films using (CpN)Ti(NMe2)2 and oxygen remote plasma
155Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
156Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
157Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
158Growth of aluminum nitride films by plasma-enhanced atomic layer deposition
159Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
160High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
161High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates
162High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
163High mobility polycrystalline indium oxide thin-film transistors by means of plasma-enhanced atomic layer deposition
164Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
165Highly-conformal nanocrystalline molybdenum nitride thin films by atomic layer deposition as a diffusion barrier against Cu
166Highly-Conformal TiN Thin Films Grown by Thermal and Plasma-Enhanced Atomic Layer Deposition
167Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
168Hot-wire assisted ALD of tungsten films: In-situ study of the interplay between CVD, etching, and ALD modes
169Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System
170Hot-wire-assisted atomic layer deposition of a high quality cobalt film using cobaltocene: Elementary reaction analysis on NHx radical formation
171Hydrogen plasma-enhanced atomic layer deposition of copper thin films
172Hysteresis behaviour of top-down fabricated ZnO nanowire transistors
173Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
174Impact of composition and crystallization behavior of atomic layer deposited strontium titanate films on the resistive switching of Pt/STO/TiN devices
175Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
176Impact of Plasma-Assisted Atomic-Layer-Deposited Gate Dielectric on Graphene Transistors
177Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
178Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer
179Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
180Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks
181In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications
182In situ diagnostics for studying gas-surface reactions during thermal and plasma-assisted atomic layer deposition
183In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
184In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pd
185In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
186Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
187Influence of Al2O3 Gate Dielectric on Transistor Properties for IGZO Thin Film Transistor
188Influence of Al2O3 layer insertion on the electrical properties of Ga-In-Zn-O thin-film transistors
189Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
190Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
191Influence of atomic layer deposition valve temperature on ZrN plasma enhanced atomic layer deposition growth
192Influence of magnetic field on the reaction mechanisms of plasma-assisted atomic layer deposition of Al2O3
193Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate
194Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition
195Influence of Substrates on the Nucleation and Growth Behaviors of Ge2Sb2Te5 Films by Combined Plasma-Enhanced Atomic Layer and Chemical Vapor Deposition
196Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors
197Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
198Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide
199Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
200Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
201Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
202Infrared Study on Room-temperature Atomic Layer Deposition of TiO2 Using Tetrakis(dimethylamino)titanium and Remote-Plasma Excited Water Vapor
203Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS
204Initial growth, refractive index, and crystallinity of thermal and plasma-enhanced atomic layer deposition AlN films
205Integration of Atomic Layer Deposited Al2O3 Dielectrics with Graphene
206Interface effect on dielectric constant of HfO2/Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition
207Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3
208Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
209Investigation of native oxide removing from HCPA ALD grown GaN thin films surface utilizing HF solutions
210Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes
211Investigation of Tungsten Nitride Deposition Using Tungsten Hexafluoride Precursor for Via and Plug Metallization
212Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
213Long period gratings coated with hafnium oxide by plasma-enhanced atomic layer deposition for refractive index measurements
214Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
215Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
216Low Temperature Atomic Layer Deposition of Crystalline In2O3 Films
217Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
218Low Temperature Formation of Silicon Oxide Thin Films by Atomic Layer Deposition Using NH3/O2 Plasma
219Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma
220Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP)
221Low Temperature Plasma-Enhanced Atomic Layer Deposition of Metal Oxide Thin Films
222Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers
223Low temperature temporal and spatial atomic layer deposition of TiO2 films
224Low-Temperature ALD Growth of SrTiO3 Thin Films from Sr beta-Diketonates and Ti Alkoxide Precursors Using Oxygen Remote Plasma as an Oxidation Source
225Low-Temperature Atomic Layer Deposition of High Purity, Smooth, Low Resistivity Copper Films by Using Amidinate Precursor and Hydrogen Plasma
226Low-temperature atomic layer deposition of MoOx for silicon heterojunction solar cells
227Low-temperature atomic layer deposition of TiO2, Al2O3,and ZnO thin films
228Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
229Low-Temperature Conformal Atomic Layer Deposition of SiNx Films Using Si2Cl6 and NH3 Plasma
230Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
231Low-temperature grown wurtzite InxGa1-xN thin films via hollow cathode plasma-assisted atomic layer deposition
232Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
233Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
234Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
235Low-Temperature Low-Resistivity PEALD TiN Using TDMAT under Hydrogen Reducing Ambient
236Low-Temperature Plasma-Assisted Atomic Layer Deposition of Silicon Nitride Moisture Permeation Barrier Layers
237Low-temperature plasma-enhanced atomic layer deposition of tin oxide electron selective layers for highly efficient planar perovskite solar cells
238Low-temperature remote plasma enhanced atomic layer deposition of ZrO2/zircone nanolaminate film for efficient encapsulation of flexible organic light-emitting diodes
239Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
240Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)
241Low-temperature sequential pulsed chemical vapor deposition of ternary BxGa1-xN and BxIn1-xN thin film alloys
242Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
243Materials Pushing the Application Limits of Wire Grid Polarizers further into the Deep Ultraviolet Spectral Range
244Mechanical and electrical properties of plasma and thermal atomic layer deposited Al2O3 films on GaAs and Si
245Metal-insulator-semiconductor structure using Ga2O3 layer by plasma enhanced atomic layer deposition
246Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
247Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
248Microwave properties of superconducting atomic-layer deposited TiN films
249Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber
250Moisture Barrier Properties of Al2O3 Films deposited by Remote Plasma Atomic Layer Deposition at Low Temperatures
251N-doped TiO2 nanotubes coated with a thin TaOxNy layer for photoelectrochemical water splitting: dual bulk and surface modification of photoanodes
252Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
253Nitrogen-Doping of Bulk and Nanotubular TiO2 Photocatalysts by Plasma-Assisted Atomic Layer Deposition
254Nucleation and growth of Pt atomic layer deposition on Al2O3 substrates using (methylcyclopentadienyl)-trimethyl platinum and O2 plasma
255Nucleation and growth of tantalum nitride atomic layer deposition on Al2O3 using TBTDET and hydrogen radicals
256On the role of nanoporosity in controlling the performance of moisture permeation barrier layers
257Optical and Electrical Properties of AlxTi1-xO Films
258Optical and Electrical Properties of TixSi1-xOy Films
259Optical properties of AlN thin films grown by plasma enhanced atomic layer deposition
260Oxide Charge Engineering of Atomic Layer Deposited AlOxNy/Al2O3 Gate Dielectrics: A Path to Enhancement Mode GaN Devices
261Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
262Patterned deposition by plasma enhanced spatial atomic layer deposition
263PEALD AlN: controlling growth and film crystallinity
264PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor
265PEALD of a Ruthenium Adhesion Layer for Copper Interconnects
266PEALD of Copper using New Precursors for Next Generation of Interconnections
267Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
268Perspectives on future directions in III-N semiconductor research
269Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
270Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
271Photocatalytic functional coatings of TiO2 thin films on polymer substrate by plasma enhanced atomic layer deposition
272Photochemical Reaction Patterns on Heterostructures of ZnO on Periodically Poled Lithium Niobate
273Plasma enhanced atomic layer deposited platinum thin film on Si substrate with TMA pretreatment
274Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN
275Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
276Plasma enhanced atomic layer deposition of Fe2O3 thin films
277Plasma enhanced atomic layer deposition of Ga2O3 thin films
278Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
279Plasma enhanced atomic layer deposition of magnesium oxide as a passivation layer for enhanced photoluminescence of ZnO nanowires
280Plasma enhanced atomic layer deposition of molybdenum carbide and nitride with bis(tert-butylimido)bis(dimethylamido) molybdenum
281Plasma enhanced atomic layer deposition of silicon nitride using neopentasilane
282Plasma enhanced atomic layer deposition of SiNx:H and SiO2
283Plasma Enhanced Atomic Layer Deposition of TiCxNy Film with Various Reactive Gases
284Plasma enhanced atomic layer deposition of zinc sulfide thin films
285Plasma enhanced atomic layer deposition of ZnO with diethyl zinc and oxygen plasma: Effect of precursor decomposition
286Plasma Enhanced Atomic Layer Deposition on Powders
287Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
288Plasma Modeling of a PEALD System for the Deposition of TiO2 and HfO2
289Plasma-Assisted ALD for the Conformal Deposition of SiO2: Process, Material and Electronic Properties
290Plasma-Assisted ALD of an Al2O3 Permeation Barrier Layer on Plastic
291Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
292Plasma-Assisted Atomic Layer Deposition of Al2O3 at Room Temperature
293Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
294Plasma-assisted atomic layer deposition of HfNx: Tailoring the film properties by the plasma gas composition
295Plasma-Assisted Atomic Layer Deposition of Low Temperature SiO2
296Plasma-Assisted Atomic Layer Deposition of SrTiO3: Stoichiometry and Crystallinity Studied by Spectroscopic Ellipsometry
297Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications
298Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor
299Plasma-Enhanced ALD of TiO2 Thin Films on SUS 304 Stainless Steel for Photocatalytic Application
300Plasma-Enhanced ALD of TiO2 Using a Novel Cyclopentadienyl Alkylamido Precursor [Ti(CpMe)(NMe2)3] and O2 Plasma
301Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
302Plasma-enhanced and thermal atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide, [Al(CH3)2(μ-OiPr)]2, as an alternative aluminum precursor
303Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating
304Plasma-Enhanced Atomic Layer Deposition (PEALD) of TiN using the Organic Precursor Tetrakis(ethylmethylamido)Titanium (TEMAT)
305Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
306Plasma-enhanced atomic layer deposition for antireflection coatings using SiO2 as low-refractive index material
307Plasma-enhanced atomic layer deposition for plasmonic TiN
308Plasma-enhanced atomic layer deposition of amorphous Ru-Si-N thin film as a diffusion barrier of direct plating of Cu
309Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4
310Plasma-Enhanced Atomic Layer Deposition of Cobalt Using Cyclopentadienyl Isopropyl Acetamidinato-Cobalt as a Precursor
311Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
312Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries
313Plasma-Enhanced Atomic Layer Deposition of Ni
314Plasma-enhanced atomic layer deposition of palladium on a polymer substrate
315Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for Copper Diffusion Barrier Metals
316Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc
317Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
318Plasma-Enhanced Atomic Layer Deposition of Silver Thin Films
319Plasma-Enhanced Atomic Layer Deposition of SiN-AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid
320Plasma-enhanced atomic layer deposition of SnO2 thin films using SnCl4 and O2 plasma
321Plasma-enhanced atomic layer deposition of superconducting niobium nitride
322Plasma-Enhanced Atomic Layer Deposition of TaCxNy Films with tert-Butylimido Tris-diethylamido Tantalum and Methane-Hydrogen Gas
323Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
324Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material
325Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants
326Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
327Plasma-enhanced atomic layer deposition of titanium phosphate as an electrode for lithium-ion batteries
328Plasma-enhanced atomic layer deposition of tungsten nitride
329Plasma-enhanced atomic layer deposition of zinc phosphate
330Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
331Platinum thin films with good thermal and chemical stability fabricated by inductively coupled plasma-enhanced atomic layer deposition at low temperatures
332Polarization charge properties of low-temperature atomic layer deposition of AlN on GaN
333Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
334Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
335Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry
336Properties of AlN grown by plasma enhanced atomic layer deposition
337Properties of Plasma-Enhanced Atomic Layer Deposition-Grown Tantalum Carbonitride Thin Films
338Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
339Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
340Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
341Radical-Enhanced Atomic Layer Deposition of Metallic Copper Thin Films - Thesis Coverage
342Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates
343Radical-Enhanced Atomic Layer Deposition of Silver Thin Films Using Phosphine-Adducted Silver Carboxylates - Thesis Coverage
344Radical-enhanced atomic layer deposition of Y2O3 via a beta-diketonate precursor and O radicals
345Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition
346Reaction mechanism of room temperature HfO2 atomic layer deposition using remote plasma excited water and oxygen
347Reaction mechanisms of atomic layer deposition of TaNx from Ta(NMe2)5 precursor and H2-based plasmas
348Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride
349Redeposition in plasma-assisted atomic layer deposition: Silicon nitride film quality ruled by the gas residence time
350Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
351Remote Plasma ALD of SrTiO3 Using Cyclopentadienlyl-Based Ti and Sr Precursors
352Remote Plasma ALD of Platinum and Platinum Oxide Films
353Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films
354Remote Plasma Atomic Layer Deposition of Co3O4 Thin Film
355Remote Plasma Atomic Layer Deposition of Co3O4 Thin Films
356Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor
357Role of low-energy ion irradiation in the formation of an aluminum germanate layer on a germanium substrate by radical-enhanced atomic layer deposition
358Role of Surface Termination in Atomic Layer Deposition of Silicon Nitride
359Role of the (Ta/Nb)Ox/Al2O3 interface on the flatband voltage shift for Al2O3/(Ta/Nb)Ox/Al2O3 multilayer charge trap capacitors
360Room temperature atomic layer deposition of TiO2 on gold nanoparticles
361Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films
362Room-Temperature ALD of Metal Oxide Thin Films by Energy-Enhanced ALD
363Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source
364Room-Temperature Atomic Layer Deposition of Platinum
365RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor
366RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor
367Ru Thin Film Formation Using Oxygen Plasma Enhanced ALD and Rapid Thermal Processing
368Ru thin film grown on TaN by plasma enhanced atomic layer deposition
369Rutile-structured TiO2 deposited by plasma enhanced atomic layer deposition using tetrakis(dimethylamino)titanium precursor on in-situ oxidized Ru electrode
370Scalability of plasma enhanced atomic layer deposited ruthenium films for interconnect applications
371Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
372Self Assembled Metamaterials Formed via Plasma Enhanced ALD of Ag Thin Films
373Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition
374Self-Limiting Growth of GaN at Low Temperatures
375Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
376Self-limiting low-temperature growth of crystalline AlN thin films by plasma-enhanced atomic layer deposition
377Silicon dioxide deposition behavior via ALD using BTBAS with ozone or O2 plasma
378Silicon Nitride and Silicon Oxide Thin Films by Plasma ALD
379Silicon surface passivation by ultrathin Al2O3 films and Al2O3/SiNx stacks
380Solid Electrolyte Lithium Phosphous Oxynitride as a Protective Nanocladding Layer for 3D High-Capacity Conversion Electrodes
381Spectral analysis of the line-width and line-edge roughness transfer during self-aligned double patterning approach
382Spectroscopy and control of near-surface defects in conductive thin film ZnO
383Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
384Spoof-like plasmonic behavior of plasma enhanced atomic layer deposition grown Ag thin films
385Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
386Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics
387Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films
388Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
389Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD
390Structural and optical characterization of low-temperature ALD crystalline AlN
391Structural characteristics of epitaxial SnO2 films deposited on a- and m-cut sapphire by ALD
392Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
393Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
394Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
395Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells
396Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition
397Study on the characteristics of aluminum thin films prepared by atomic layer deposition
398Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films
399Substrate Dependent Growth Rate of Plasma-Enhanced Atomic Layer Deposition of Titanium Oxide Using N2O Gas
400Substrate impact on the low-temperature growth of GaN thin films by plasma-assisted atomic layer deposition
401Substrate temperature influence on the properties of GaN thin films grown by hollow-cathode plasma-assisted atomic layer deposition
402Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growth
403Superconducting niobium nitride thin films deposited by metal organic plasma-enhanced atomic layer deposition
404Surface Infrared Spectroscopy during Low Temperature Growth of Supported Pt Nanoparticles by Atomic Layer Deposition
405Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
406Surface Reaction Mechanisms during Plasma-Assisted Atomic Layer Deposition of Titanium Dioxide
407Surface treatments on AlGaN/GaN heterostructures for gate dielectric Al2O3 thin films grown by Atomic Layer Deposition
408Sustained hole inversion layer in a wide-bandgap metal-oxide semiconductor with enhanced tunnel current
409Symmetrical Al2O3-based passivation layers for p- and n-type silicon
410Synergy Between Plasma-Assisted ALD and Roll-to-Roll Atmospheric Pressure PE-CVD Processing of Moisture Barrier Films on Polymers
411Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition
412Synthesis and Characterization of Tin Oxide By Atomic Layer Deposition for Solid-State Batteries
413Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
414Tailoring Electron-Transfer Barriers for Zinc Oxide/C60 Fullerene Interfaces
415Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
416TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
417Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition
418Terahertz Quantum Plasmonics of Nanoslot Antennas in Nonlinear Regime
419The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
420The effects of layering in ferroelectric Si-doped HfO2 thin films
421The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
422The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
423The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
424The influence of N2/H2 and ammonia N source materials on optical and structural properties of AlN films grown by plasma enhanced atomic layer deposition
425The Integration of Plasma Enhanced Atomic Layer Deposition (PEALD) of Tantalum- Based Thin Films for Copper Diffusion Barrier Applications
426The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma-treated SiO2
427The Sandwich Structure of Ga-Doped ZnO Thin Films Grown via H2O-, O2-, and O3-Based Atomic Layer Deposition
428Thermal and plasma enhanced atomic layer deposition ruthenium and electrical characterization as a metal electrode
429Thermal and Plasma-Enhanced ALD of Ta and Ti Oxide Thin Films from Alkylamide Precursors
430Thermal and Plasma-Enhanced Atomic Layer Deposition of TiN Using TDMAT and NH3 on Particles Agitated in a Rotary Reactor
431Thin film GaP for solar cell application
432Ti-Al-N Thin Films Prepared by the Combination of Metallorganic Plasma-Enhanced Atomic Layer Deposition of Al and TiN
433TiO2/Al2O3/TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition
434Tunable Work-Function Engineering of TiC-TiN Compound by Atomic Layer Deposition for Metal Gate Applications
435Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell
436Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
437Ultra-Low Temperature Deposition of Copper Seed Layers by PEALD
438Ultra-Thin Aluminium Oxide Films Deposited by Plasma-Enhanced Atomic Layer Deposition for Corrosion Protection
439Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
440Ultrathin Surface Coating Enables the Stable Sodium Metal Anode
441Ultraviolet photodetector based on MgxZn1-xO films using plasma-enhanced atomic layer deposition
442Understanding the EOT-Jg degradation in Ru/SrTiOx/Ru metal-insulator-metal capacitors formed with Ru atomic layer deposition
443Understanding the mechanisms of interfacial reactions during TiO2 layer growth on RuO2 by atomic layer deposition with O2 plasma or H2O as oxygen source
444Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
445Use of B2O3 films grown by plasma-assisted atomic layer deposition for shallow boron doping in silicon
446Work function tuning of plasma-enhanced atomic layer deposited WCxNy electrodes for metal/oxide/semiconductor devices
447Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
448ZrO2 Thin Film Deposition on TiN by Plasma Enhanced Atomic Layer Deposition Using Cyclopentadienyltris(dimetylamino)zirconium

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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