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Capacitance Plasma Enhanced Atomic Layer Deposition Publications

Your search for plasma enhanced atomic layer deposition publications discussing Capacitance returned 79 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A comparative study of AlN and Al2O3 based gate stacks grown by atomic layer deposition on InGaAs
2A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
3ALD titanium nitride coated carbon nanotube electrodes for electrochemical supercapacitors
4ALD titanium nitride on vertically aligned carbon nanotube forests for electrochemical supercapacitors
5AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
6AlN passivation by plasma-enhanced atomic layer deposition for GaN-based power switches and power amplifiers
7Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
8Capacitance-voltage characterization of Al2O3/GaN-on-insulator (GaNOI) structures with TMAH surface treatment
9Characteristics of Al2O3 Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
10Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
11Characterization of HfOxNy thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas
12Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications
13Comparative study on growth characteristics and electrical properties of ZrO2 films grown using pulsed plasma-enhanced chemical vapor deposition and plasma-enhanced atomic layer deposition for oxide thin film transistors
14Comparative study on interface and bulk charges in AlGaN/GaN metal-insulator-semiconductor heterostructures with Al2O3, AlN, and Al2O3/AlN laminated dielectrics
15Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
16Damage free Ar ion plasma surface treatment on In0.53Ga0.47As-on-silicon metal-oxide-semiconductor device
17Degradation of the surface passivation of plasma-assisted ALD Al2O3 under damp-heat exposure
18Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
19Effect of NH3 plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor
20Effect of Nitrogen Incorporation in HfO2 Films Deposited by Plasma-Enhanced Atomic Layer Deposition
21Effective work function modulation of the bilayer metal gate stacks by the Hf-doped thin TiN interlayer prepared by the in-situ atomic layer doping technique
22Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
23Effects of H2 plasma and annealing on atomic-layer-deposited Al2O3 films and Al/Al2O3/Si structures
24Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition
25Electrical characteristics and step coverage of ZrO2 films deposited by atomic layer deposition for through-silicon via and metal-insulator-metal applications
26Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
27Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications
28Electrical Comparison of HfO2 and ZrO2 Gate Dielectrics on GaN
29Enhanced non-volatile memory characteristics with quattro-layer graphene nanoplatelets vs. 2.85-nm Si nanoparticles with asymmetric Al2O3/HfO2 tunnel oxide
30Epitaxially grown crystalline Al2O3 interlayer on β-Ga2O3 (010) and its suppressed interface state density
31Fast PEALD ZnO Thin-Film Transistor Circuits
32Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
33Growth Characteristics and Film Properties of Cerium Dioxide Prepared by Plasma-Enhanced Atomic Layer Deposition
34High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition
35High Mobility (210cm2/Vs), High Capacitance (7.2uF/cm2) ZrO2 on GaN Metal Oxide Semiconductor Capacitor via ALD
36High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8nm equivalent oxide thickness
37High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning
38Highly transparent low capacitance plasma enhanced atomic layer deposition Al2O3-HfO2 tunnel junction engineering
39Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack
40Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
41Improved Electrical Properties of Crystalline ZrO2/Al2O3 Buffer Gate Stack with Double Nitridation
42Improvement of interfacial and electrical properties of Al2O3/n-Ga0.47In0.53As for III-V impact ionization MOSFETs
43In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors
44In situ surface cleaning on a Ge substrate using TMA and MgCp2 for HfO2-based gate oxides
45Influence of Atomic Layer Deposition Temperatures on TiO2/n-Si MOS Capacitor
46Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz films
47Low Dit HfO2/Al2O3/In0.53Ga0.47As gate stack achieved with plasma-enhanced atomic layer deposition
48Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
49Low-Temperature Deposition of Aluminum Oxide by Radical Enhanced Atomic Layer Deposition - Thesis Coverage
50Low-Temperature Growth of SiO2 Films by Plasma-Enhanced Atomic Layer Deposition
51Low-temperature plasma-enhanced atomic layer deposition of HfO2/Al2O3 nanolaminate structure on Si
52MANOS performance dependence on ALD Al2O3 oxidation source
53Nitride passivation of the interface between high-k dielectrics and SiGe
54Oxygen migration in TiO2-based higher-k gate stacks
55Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications
56Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
57Performance enhancement of InAsSb QW-MOSFETs with in-situ H2 plasma cleaning for gate stack formation
58Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments
59Plasma Enhanced Atomic Layer Deposition of Al2O3/SiO2 MIM Capacitors
60Plasma enhanced atomic layer deposition of HfO2 and ZrO2 high-k thin films
61Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap Density
62Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
63Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor
64Plasma-enhanced atomic layer deposition of titanium oxynitrides films: A comparative spectroscopic and electrical study
65Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD
66Properties of HfLaO MOS capacitor deposited on SOI with plasma enhanced atomic layer deposition
67Radical Enhanced Atomic Layer Deposition of Tantalum Oxide - Thesis Coverage
68Radical Enhanced Atomic Layer Deposition of Titanium Dioxide - Thesis Coverage
69Spontaneous formation of aluminum germanate on Ge(100) by atomic layer deposition with trimethylaluminum and microwave-generated atomic oxygen
70Structural and Electrical Analysis of Thin Interface Control Layers of MgO or Al2O3 Deposited by Atomic Layer Deposition and Incorporated at the high-k/III-V Interface of MO2/InxGa1-xAs (M = Hf|Zr, x = 0|0.53) Gate Stacks
71Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System
72Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
73Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
74The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films
75The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces
76Three dimensional ALD of TiO2 for in-vivo biomedical sensor applications
77Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-k gate dielectrics
78Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors
79ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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