RT Atomic Layer Deposition of Al2O3 By Using Remote Plasma Excited Water Vapor

Type:
Poster
Info:
227th ECS Meeting May 24, 2015 - May 28, 2015 Chicago, IL, MA2015-01 2274
Date:
2015-05-27

Author Information

Name Institution
Kensaku KanomataYamagata University
P. Pungboon PansilaYamagata University
Hisashi OhbaYamagata University
Bashir AhmmadYamagata University
Shigeru KubotaYamagata University
Kazuhiro HiraharaYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Barrier Characteristics
Analysis: -

Substrates

Si(100)

Notes

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