Publication Information

Title: Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma

Type: Journal

Info: J. Vac. Sci. Technol. A 31(1), Jan/Feb 2013

Date: 2012-10-12

DOI: http://dx.doi.org/10.1116/1.4758782

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 25-400C

1445-79-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Asylum Research MFP-3D

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MPD X-ray Diffractometer

Thickness

Ellipsometry

J.A. Woollam VASE

Substrates

Si(111)

Keywords

Notes

RTA under N2 ambient.

109

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