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High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, PP. 857-859, 2010
Date:
2010-05-02
Author Information
| Name | Institution |
|---|---|
| Seok-Jun Won | Seoul National University |
| Sungin Suh | Seoul National University |
| Myung Soo Huh | Seoul National University |
| Hyeong Joon Kim | Seoul National University |
Films
Plasma SiO2
Film/Plasma Properties
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Etch Rate
Analysis: Custom
Characteristic: Density
Analysis: GIXRR, Grazing Incidence X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
Notes
| Claims BDEAS has no reaction with O2 gas but I doubt this. |
| 706 |