Publication Information

Title: Double nitridation of crystalline ZrO2/Al2O3 buffer gate stack with high capacitance, low leakage and improved thermal stability

Type: Journal

Info: Applied Surface Science Volume 330, 1 March 2015, Pages 221-227

Date: 2015-01-03

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.01.005

Author Information

Name

Institution

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

Films

Deposition Temperature = 250C

175923-04-3

7782-44-7

Deposition Temperature = 250C

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Silicon

Keywords

Notes

325

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