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Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment
Type:
Journal
Info:
Journal of Vacuum Science & Technology B 33, 04E102 (2015)
Date:
2015-04-03
Author Information
| Name | Institution |
|---|---|
| Laura B. Ruppalt | U.S. Naval Research Laboratory |
| Erin Cleveland | U.S. Naval Research Laboratory |
| James G. Champlain | U.S. Naval Research Laboratory |
| Brian R. Bennett | U.S. Naval Research Laboratory |
| J. Brad Boos | U.S. Naval Research Laboratory |
| Sharka M. Prokes | U.S. Naval Research Laboratory |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| GaSb |
Notes
| 346 |