Publication Information

Title: Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2 , N2/H2, and NH3 plasma treatments

Type: Journal

Info: 2013 J. Phys. D: Appl. Phys. 46 055103

Date: 2012-11-08

DOI: http://dx.doi.org/10.1088/0022-3727/46/5/055103

Author Information

Name

Institution

National Taiwan University

Integrated Service Technology Inc.

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan University

National Taiwan Normal University

National Taiwan University

Films

Deposition Temperature = 250C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Silicon

Keywords

Notes

607

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