Publication Information

Title: High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Type: Journal

Info: APPLIED PHYSICS LETTERS 100, 071606 (2012)

Date: 2012-02-01

DOI: http://dx.doi.org/10.1063/1.3687199

Author Information

Name

Institution

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Aalto University

Films

Plasma AlN using Beneq TFS-500

Deposition Temperature Range N/A

75-24-1

7664-41-7

Thermal HfO2 using Beneq TFS-500

Deposition Temperature = 350C

13499-05-3

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Substrates

GaAs

AlN

Keywords

High-k Dielectric Thin Films

Passivation

Gate Dielectric

Notes

Beneq TFS-500 plasma AlN and thermal HfO2 for GaAs passivation and MIS gate dielectric.

175

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