Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

Type:
Other
Info:
arXiv.org > cond-mat > arXiv:1403.3787
Date:
2014-03-15

Author Information

Name Institution
Xiaohui TangUniversite catholique de Louvain (UCL)
Nicolas ReckingerUniversity of Namur
Olivier PonceletUniversite catholique de Louvain (UCL)
Pierre LouetteUniversity of Namur
Jean-François ColomerUniversity of Namur
Jean-Pierre RaskinUniversite catholique de Louvain (UCL)
Benoit HackensUniversite catholique de Louvain (UCL)
Laurent A. FrancisUniversite catholique de Louvain (UCL)

Films



Film/Plasma Properties

Characteristic: Images
Analysis: Optical Microscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Damage, Defects
Analysis: Raman Spectroscopy

Characteristic: Damage, Defects
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Graphene
Silicon

Notes

Ultratech Fiji PEALD Al2O3 and HfO2 deposition on graphene study.
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