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The effects of layering in ferroelectric Si-doped HfO2 thin films
Type:
Journal
Info:
APPLIED PHYSICS LETTERS 105, 072906 (2014)
Date:
2014-08-11
Author Information
| Name | Institution |
|---|---|
| Patrick D. Lomenzo | University of Florida |
| Qanit Takmeel | University of Florida |
| Chuanzhen Zhou | North Carolina State University |
| Yang Liu | North Carolina State University |
| Chris M. Fancher | North Carolina State University |
| Jacob L. Jones | North Carolina State University |
| Saeed Moghaddam | University of Florida |
| Toshikazu Nishida | University of Florida |
Films
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Characteristic: Remanent Polarization
Analysis: -
Substrates
| Silicon |
Notes
| Substrates HF dipped. |
| Deposited films received RTA processing. |
| 121 |