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The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices
Type:
Journal
Info:
2014 IEEE International Symposium on Circuits and Systems (ISCAS)
Date:
2014-06-01
Author Information
| Name | Institution |
|---|---|
| Katrina A. Morgan | University of Southampton |
| Ruomeng Huang | University of Southampton |
| Stuart Pearce | University of Southampton |
| C.H. de Groot | University of Southampton |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Substrates
| TiN |
Notes
| Oxford Instruments FlexAL PEALD HfO2 for resistive RAM device study. |
| 291 |