Publication Information

Title: The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices

Type: Journal

Info: 2014 IEEE International Symposium on Circuits and Systems (ISCAS)

Date: 2014-06-01

DOI: http://dx.doi.org/10.1109/ISCAS.2014.6865158

Author Information

Name

Institution

University of Southampton

Films

Deposition Temperature Range = 300-400C

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Bruker D8 Discover

Thickness

SEM, Scanning Electron Microscopy

Unknown

Substrates

Keywords

Resistance RAM

Notes

Oxford Instruments FlexAL PEALD HfO2 for resistive RAM device study.

291

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