Publication Information

Title: Hysteresis behaviour of top-down fabricated ZnO nanowire transistors

Type: Journal

Info: 2013 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

Date: 2013-09-25

DOI: http://dx.doi.org/10.1109/RSM.2013.6706553

Author Information

Name

Institution

University of Technology, Malaysia

University of Technology, Malaysia

University of Technology, Malaysia

University of Technology, Malaysia

Films

Deposition Temperature = 100C

557-20-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Transistor Characteristics

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Hysteresis

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

611

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