Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al2O3

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 14 (1) H1-H4 (2011)
Date:
2010-09-15

Author Information

Name Institution
Gijs DingemansEindhoven University of Technology
N. M. TerlindenEindhoven University of Technology
D. PierreuxASM Microchemistry Oy
H. B. ProfijtEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Al2O3


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Surface Recombination Velocity
Analysis: Photoconductance

Characteristic: Passivation
Analysis: SHG, Second Harmonic Generation

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface State Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Substrates

Silicon

Notes

Paper available as chapter 5 in on-line thesis.
Paper says Oxford Instruments and ASM ALD tools. OpAL and EmerALD are guesses.
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