An efficient PE-ALD process for TiO2 thin films employing a new Ti-precursor

Type:
Journal
Info:
J. Mater. Chem. C, 2016
Date:
2015-12-20

Author Information

Name Institution
Maximilian GebhardRuhr-University Bochum
Felix MitschkerRuhr-University Bochum
M. WiesingUniversity of Paderborn
I. GinerUniversity of Paderborn
B. TorunUniversity of Paderborn
Teresa de los ArcosUniversity of Paderborn
Peter AwakowiczRuhr-University Bochum
G. GrundmeierUniversity of Paderborn
Anjana DeviRuhr-University Bochum

Films


Film/Plasma Properties

Characteristic: Surface Reactions
Analysis: QCM, Quartz Crystal Microbalance

Characteristic: Thickness
Analysis: QCM, Quartz Crystal Microbalance

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Diffusion Barrier Properties
Analysis: Oxygen Transmission Rate (OTR)

Characteristic: Precursor Characterization
Analysis: NMR, Nuclear Magnetic Resonance

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Thickness
Analysis: Reflectometry

Characteristic: Refractive Index
Analysis: Reflectometry

Characteristic: Extinction Coefficient
Analysis: Reflectometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(100)
PET, Polyethylene Terephthalate

Notes

471