Publication Information

Title: Nitride passivation of the interface between high-k dielectrics and SiGe

Type: Journal

Info: Applied Physics Letters 108, 011604 (2016)

Date: 2015-12-21

DOI: http://dx.doi.org/10.1063/1.4939460

Author Information

Name

Institution

University of California - San Diego

University of California - San Diego

Stanford University

SUNY Polytechnic Institute

Stanford University

SUNY Polytechnic Institute

Global Foundries

Global Foundries

Applied Materials

Applied Materials

Applied Materials

University of California - San Diego

University of California - San Diego

Films

Other Al2O3 using Beneq TFS-200

Deposition Temperature Range = 120-300C

7664-41-7

75-24-1

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Transistor Characteristics

I-V, Current-Voltage Measurements

Unknown

Substrates

SiGe

Keywords

Passivation

Diffusion Barrier

Notes

457

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