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Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 01A110 (2018)
Date:
2017-11-14
Author Information
| Name | Institution |
|---|---|
| Mustafa Alevli | Marmara University |
| N. Gungor | Marmara University |
Films
Plasma AlN
Plasma AlN
Plasma GaN
Plasma GaN
Plasma InN
Plasma InN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Vibrational Properties
Analysis: FTIR Spectroscopic Ellipsometry
Characteristic: Optical Absorption
Analysis: Optical Absorption
Substrates
| Si(100) |
Notes
| 1052 |