Publication Information

Title: Characteristics of an Al2O3 Thin Film Deposited by a Plasma Enhanced Atomic Layer Deposition Method Using N2O Plasma

Type: Journal

Info: Electronic Materials Letters. 2007;3(1): 17-21.

Date: 2007-01-01

DOI: http://eml.kim.or.kr/On_line/admin/files/17-21.pdf

Author Information

Name

Institution

Hanyang University

Hanyang University

Films

Deposition Temperature Range = 100-260C

75-24-1

10024-97-2

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Thickness

Ellipsometry

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Interlayer

TEM, Transmission Electron Microscope

Unknown

Density

XRR, X-Ray Reflectivity

Unknown

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Substrates pirahna and HF cleaned

Rapid thermal anneal

3

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com