Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32, 031508 (2014)
Date:
2014-03-24

Author Information

Name Institution
Eda GoldenbergBilkent University
Çağla ÖzgitBilkent University
Necmi BiyikliBilkent University
Ali Kemal OkyayBilkent University

Films




Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Transmittance
Analysis: Spectrophotometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Extinction Coefficient
Analysis: Ellipsometry

Characteristic: Optical Bandgap
Analysis: Ellipsometry

Characteristic: Thermal Stability
Analysis: Anneal

Substrates

Si(100)
Sapphire

Notes

Substrates sequentially ultrasonically cleaned with 2-propanol, acetone, methanol, and deionized water.
Si HF dipped and rinsed with deionized water.
Tauc-Lorentz (TL) discussed for SE measurements.
Meaglow Ltd hollow cathode RF-plasma source was used.
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