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Pt Nanocrystals Embedded in Remote Plasma Atomic-Layer-Deposited HfO2 for Nonvolatile Memory Devices
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 12 (4) H92-H94 (2009)
Date:
2008-12-08
Author Information
| Name | Institution |
|---|---|
| Honggyu Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Hyungchul Kim | Hanyang University |
| Seokhwan Bang | Hanyang University |
| Yongchan Kim | Hanyang University |
| Daesik Choi | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Charge Retention Time
Analysis: C-t, Capacitance-time Measurements
Substrates
| Si(100) |
| Pt |
Notes
| 755 |