Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells

Type:
Journal
Info:
Thin Solid Films, Available online 28 September 2014
Date:
2014-09-28

Author Information

Name Institution
Cathy BugotInstitut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP)

Films

Other In2(S,O)3


Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Optical Bandgap
Analysis: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Optical Properties
Analysis: Spectrophotometry

Substrates

Notes

PEALD of InOS for PV application.
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