Publication Information

Title: Study of Atomic Layer Deposition of Indium Oxy-sulfide films for Cu(In,Ga)Se2 solar cells

Type: Journal

Info: Thin Solid Films, Available online 28 September 2014

Date: 2014-09-28

DOI: http://dx.doi.org/10.1016/j.tsf.2014.09.036

Author Information

Name

Institution

Institut de Recherche et D√©veloppement sur l'Energie Photovolta√Įque (IRDEP)

Films

Deposition Temperature = 160C

14405-45-9

7783-06-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Unknown

Thickness

XRR, X-Ray Reflectivity

PANalytical Empyrean

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Optical Bandgap

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Empyrean

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Optical Properties

Spectrophotometry

PerkinElmer lambda 900 Spectrophotometer

Substrates

Keywords

Thin Film Solar Cell

Notes

PEALD of InOS for PV application.

287

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