Low-Leakage Tetragonal ZrO2 (EOT < 1 nm) With In Situ Plasma Interfacial Passivation on Germanium

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 37, NO. 2, PP. 138-141, 2016
Date:
2015-12-17

Author Information

Name Institution
C. ChouNational Chiao Tung University
H. ChangNational Chiao Tung University
C. HsuNational Chiao Tung University
W. YehNational Chiao Tung University
C. ChienNational Chiao Tung University

Films


Film/Plasma Properties

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -

Substrates

GeO2

Notes

503