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Selective deposition of Ta2O5 by adding plasma etching super-cycles in plasma enhanced atomic layer deposition steps
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B104 (2017)
Date:
2016-10-10
Author Information
| Name | Institution |
|---|---|
| Rémi Vallat | Grenoble Alps University (UGA) |
| Rémy Gassilloud | CEA - LETI MINATEC |
| Brice Eychenne | Grenoble Alps University (UGA) |
| Christophe Vallée | Grenoble Alps University (UGA) |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
| Ta2O5 |
Notes
| Deposition hardware identified through reference 30. |
| Selectivity obtained by Ta2O5 etch back with NF3 plasma to nucleation delay prone substrate. |
| 904 |