Publication Information

Title: Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

Type: Journal

Info: Applied Physics Letters 101, 231601 (2012)

Date: 2012-11-08

DOI: http://dx.doi.org/10.1063/1.4768693

Author Information

Name

Institution

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

U.S. Naval Research Laboratory

Films

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 150C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Substrates

GaSb

Keywords

Notes

H2 plasma substrate treatment preceded PEALD Al2O3 deposition.

630

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