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Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
Type:
Journal
Info:
Applied Physics Letters 101, 231601 (2012)
Date:
2012-11-08
Author Information
| Name | Institution |
|---|---|
| Laura B. Ruppalt | U.S. Naval Research Laboratory |
| Erin Cleveland | U.S. Naval Research Laboratory |
| James G. Champlain | U.S. Naval Research Laboratory |
| Sharka M. Prokes | U.S. Naval Research Laboratory |
| J. Brad Boos | U.S. Naval Research Laboratory |
| Doewon Park | U.S. Naval Research Laboratory |
| Brian R. Bennett | U.S. Naval Research Laboratory |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaSb |
Notes
| H2 plasma substrate treatment preceded PEALD Al2O3 deposition. |
| 630 |