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Fabrication and Properties of GaN MIS Capacitors with a Remote-Plasma Atomic-Layer-Deposited Al2O3 Gate Dielectric
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 54, No. 2, February 2009, pp. 707~711
Date:
2008-11-10
Author Information
| Name | Institution |
|---|---|
| Hyeong-Seon Yun | Cheongju University |
| Kwang-Ho Kim | Cheongju University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| GaN |
Notes
| 184 |