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Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
Type:
Poster
Info:
ALD 2011
Date:
2011-06-26
DOI:
No DOI
Author Information
| Name | Institution |
|---|---|
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
| Mustafa Alevli | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma AlN
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Custom
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Si(100) |
Notes
| Substrates organic cleaned + HF |
| 19 |