Publication Information

Title: Room-Temperature Atomic Layer Deposition of HfO2 By Using Remote Plasma Source

Type: Conference Proceedings

Info: 2014 ECS and SMEQ Joint International Meeting

Date: 2014-10-05

DOI: http://ma.ecsdl.org/content/MA2014-01/36/1392.short

Author Information

Name

Institution

Yamagata University

Films

Plasma HfO2 using Custom

Deposition Temperature = 25C

352535-01-4

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Deposition Kinetics, Reaction Mechanism

IRAS, Infrared Reflection Absorption Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

Ellipsometry

Unknown

Substrates

Si(100)

Keywords

Low-Temperature

PEALD Film Development

Notes

Room T PEALD of HfO2.

282

Disclaimer

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