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Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 158(2) G21-G26 (2011)
Date:
2010-10-27
Author Information
| Name | Institution |
|---|---|
| K. B. Jinesh | NXP Semiconductors Research |
| J. L. van Hemmen | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Fred Roozeboom | Eindhoven University of Technology |
| J. H. Klootwijk | Eindhoven University of Technology |
| W. F. A. Besling | NXP Semiconductors Research |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma Al2O3
Thermal Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Substrates
| Silicon |
Notes
| Films annealed in forming gas at 450C for 30 minutes prior to metal electrode deposition. |
| As deposited films compared to annealed films. |
| 182 |