Publication Information

Title: Dielectric Properties of Thermal and Plasma-Assisted Atomic Layer Deposited Al2O3 Thin Films

Type: Journal

Info: Journal of The Electrochemical Society, 158(2) G21-G26 (2011)

Date: 2010-10-27

DOI: http://dx.doi.org/10.1149/1.3517430

Author Information

Name

Institution

NXP Semiconductors Research

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

NXP Semiconductors Research

Eindhoven University of Technology

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Unknown

Leakage Current

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Barrier Height

I-V, Current-Voltage Measurements

Agilent 4155C Semiconductor Parameter Analyzer

Thickness

XRR, X-Ray Reflectivity

Unknown

Substrates

Silicon

Keywords

Notes

Films annealed in forming gas at 450C for 30 minutes prior to metal electrode deposition.

As deposited films compared to annealed films.

182

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