Publication Information

Title: TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

Type: Journal

Info: Journal of Applied Physics 117, 134105 (2015)

Date: 2015-03-22

DOI: http://dx.doi.org/10.1063/1.4916715

Author Information

Name

Institution

University of Florida

University of Florida

North Carolina State University

North Carolina State University

University of Florida

University of Florida

North Carolina State University

University of Florida

University of Florida

Films

Deposition Temperature = 200C

19962-11-9

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

ION TOF TofSIMS 5

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

PHI VersaProbe 5000

Hysteresis

P-V, Polarization-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent 4294A

Pulsed Transient Current Measurement

I-V, Current-Voltage Measurements

Agilent 33511B

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Rigaku Smartlab

Thickness

TEM, Transmission Electron Microscope

JEOL 2010F

Microstructure

TEM, Transmission Electron Microscope

JEOL 2010F

Substrates

TaN

Keywords

Ferroelectrics

Notes

Ultratech/Cambridge NanoTech Fiji PEALD Si:HfO2 for ferroelectric study.

345

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