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Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition
Type:
Journal
Info:
Microelectronic Engineering, Volume 109, September 2013, Pages 126–128
Date:
2013-03-16
Author Information
| Name | Institution |
|---|---|
| S. Mather | University of Liverpool |
| Naser Sedghi | University of Liverpool |
| M. Althobaiti | University of Liverpool |
| Ivona Z. Mitrovic | University of Liverpool |
| Vinod R. Dhanak | University of Liverpool |
| Paul R. Chalker | University of Liverpool |
| Steve Hall | University of Liverpool |
Films
Plasma HfO2
Film/Plasma Properties
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Al2O3 |
Notes
| 590 |