Publication Information

Title: Low EOT GeO2/Al2O3/HfO2 on Ge substrate using ultrathin Al deposition

Type: Journal

Info: Microelectronic Engineering, Volume 109, September 2013, Pages 126–128

Date: 2013-03-16

DOI: http://dx.doi.org/10.1016/j.mee.2013.03.032

Author Information

Name

Institution

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

University of Liverpool

Films

Deposition Temperature = 250C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Leakage Current

I-V, Current-Voltage Measurements

Keithley 617B electrometer

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4192A

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4192A

Images

TEM, Transmission Electron Microscope

JEOL 2100

Thickness

TEM, Transmission Electron Microscope

JEOL 2100

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Al2O3

Keywords

Notes

590

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

Follow plasma-ald.com

Follow @PlasmaALDGuy Tweet

Shortcuts



© 2014-2017 plasma-ald.com