Publication Information

Title: Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

Type: Journal

Info: physica status solidi (RRL) - Rapid Research Letters Volume 5, Issue 1, pages 22--24, 2011

Date: 2010-11-15

DOI: http://dx.doi.org/10.1002/pssr.201004378

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

75-24-1

7732-18-5

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Lifetime

Photoconductance

Sinton WCT-100

Surface Recombination Velocity

Photoconductance

Sinton WCT-100

Fixed Charge

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Unknown

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

SiO2

Keywords

Passivation

Solar

Notes

684

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