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Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film
Type:
Journal
Info:
physica status solidi (RRL) - Rapid Research Letters Volume 5, Issue 1, pages 22--24, 2011
Date:
2010-11-15
Author Information
| Name | Institution |
|---|---|
| Gijs Dingemans | Eindhoven University of Technology |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Thermal Al2O3
Plasma Al2O3
Film/Plasma Properties
Characteristic: Lifetime
Analysis: Photoconductance
Characteristic: Surface Recombination Velocity
Analysis: Photoconductance
Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| SiO2 |
Notes
| 684 |