Title: Self-Limiting Growth of GaN at Low Temperatures
Info: Acta Physica Polonica A 120, no. 6A (2011).
Chemical Composition, Impurities
XPS, X-ray Photoelectron Spectroscopy
Thermo Scientific K-Alpha
J.A. Woollam VASE
Substrates HF dipped followed by DI rinse and N2 drying.
Ultratech Fiji PEALD GaN film development.
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