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Self-Limiting Growth of GaN at Low Temperatures
Type:
Journal
Info:
Acta Physica Polonica A 120, no. 6A (2011).
Date:
2011-09-19
Author Information
| Name | Institution |
|---|---|
| Çağla Özgit | Bilkent University |
| İnci Dönmez | Bilkent University |
| Necmi Biyikli | Bilkent University |
Films
Plasma GaN
Plasma GaN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: Ellipsometry
Substrates
| Si(100) |
| Si(111) |
Notes
| Substrates HF dipped followed by DI rinse and N2 drying. |
| Ultratech Fiji PEALD GaN film development. |
| 160 |