Publication Information

Title: Study of Y2O3 Thin Film Prepared by Plasma Enhanced Atomic Layer Deposition

Type: Conference Proceedings

Info: ECS Trans. 2014 volume 64, issue 9, 15-21

Date: 2014-10-06

DOI: http://dx.doi.org/10.1149/06409.0015ecst

Author Information

Name

Institution

Seoul National University

Films

Deposition Temperature Range = 175-325C

329735-72-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Density

XRR, X-Ray Reflectivity

PANalytical Xpert PRO MRD X-ray Diffractometer

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo VG-Scientific theta probe

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4284A LCR

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films

PEALD Film Development

Notes

PEALD development of Y2O3 film.

288

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