Publication Information

Title: Optical properties and bandgap evolution of ALD HfSiOx films

Type: Journal

Info: Nanoscale Research Letters (2015) 10:32

Date: 2014-12-30

DOI: http://dx.doi.org/10.1186/s11671-014-0724-z

Author Information

Name

Institution

Fudan University

Technische Universität Chemnitz

Fudan University

Fudan University

Fudan University

Technische Universität Chemnitz

Fudan University

Technische Universität Chemnitz

Fudan University

Films

Plasma HfO2 using Beneq TFS-200

Deposition Temperature = 200C

352535-01-4

7782-44-7

Plasma SiO2 using Beneq TFS-200

Deposition Temperature = 200C

15112-89-7

7782-44-7

Plasma HfSiOx using Beneq TFS-200

Deposition Temperature = 200C

352535-01-4

15112-89-7

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Optical Properties

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Extinction Coefficient

Ellipsometry

J.A. Woollam VASE

Optical Bandgap

Ellipsometry

J.A. Woollam VASE

Substrates

Si(100)

Keywords

High-k Dielectric Thin Films

Optical

Notes

Wafers RCA + HF + DI + N2 predeposition.

Beneq TFS-200 PEALD HfO2 and HfSiOx optical and bandgap properties study.

296

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