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Optical properties and bandgap evolution of ALD HfSiOx films
Type:
Journal
Info:
Nanoscale Research Letters (2015) 10:32
Date:
2014-12-30
Author Information
| Name | Institution |
|---|---|
| Wen Yang | Fudan University |
| Michael Fronk | Technische Universität Chemnitz |
| Yang Geng | Fudan University |
| Lin Chen | Fudan University |
| Qing-Qing Sun | Fudan University |
| Ovidiu D. Gordan | Technische Universität Chemnitz |
| Peng Zhou | Fudan University |
| Dietrich R. T. Zahn | Technische Universität Chemnitz |
| David Wei Zhang | Fudan University |
Films
Plasma HfO2
Plasma SiO2
Plasma HfSiOx
Film/Plasma Properties
Characteristic: Optical Properties
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Optical Bandgap
Analysis: Ellipsometry
Substrates
| Si(100) |
Notes
| Wafers RCA + HF + DI + N2 predeposition. |
| Beneq TFS-200 PEALD HfO2 and HfSiOx optical and bandgap properties study. |
| 296 |