Publication Information

Title: High Dielectric Constant ZrO2 Films by Atomic Layer Deposition Technique on Germanium Substrates

Type: Journal

Info: Silicon 2015, pp 1--6

Date: 2015-08-19

DOI: http://dx.doi.org/10.1007/s12633-015-9322-7

Author Information

Name

Institution

North Maharashtra University

North Maharashtra University

University of California - Santa Barbara (UCSB)

Films

Deposition Temperature = 300C

175923-04-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Philips SD 1000

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Interface Trap Density

C-V, Capacitance-Voltage Measurements

Agilent 4284A LCR Meter

Unknown

I-V, Current-Voltage Measurements

Keithley 4200-SCS

Images

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Unknown

Substrates

Ge

Keywords

Notes

482

Disclaimer

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