Al2O3/SiNx-Stacks at Increased Temperatures: Avoiding Blistering During Contact Firing

Type:
Conference Proceedings
Info:
Proceedings of the 2nd International Conference on Crystalline Silicon Photovoltaics SiliconPV 2012
Date:
2012-04-02

Author Information

Name Institution
T. LüderUniversity of Konstanz
T. LauermannUniversity of Konstanz
A. ZuschlagUniversity of Konstanz
G. HahnUniversity of Konstanz
B. TerheidenUniversity of Konstanz

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Substrate Temperature
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Passivation
Analysis: Photoconductance

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Images
Analysis: Optical Microscopy

Characteristic: Blistering
Analysis: Optical Microscopy

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Blistering
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Substrates

Silicon

Notes

627