Publication Information

Title: Tri-gate InGaAs-OI junctionless FETs with PE-ALD Al2O3 gate dielectric and H2/Ar anneal

Type: Journal

Info: Nanoscale 2016, Volume 115, Part B, Issue , pp 103 - 108

Date: 2015-09-05

DOI: http://dx.doi.org/10.1016/j.sse.2015.08.018

Author Information

Name

Institution

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

IBM Research, Zurich Research Lab

Films

Deposition Temperature Range N/A

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Band Gap

Unknown

Unknown

Dielectric Constant, Permittivity

Unknown

Unknown

Breakdown Voltage

Unknown

Unknown

Interface Trap Density

Unknown

Unknown

Transistor Characteristics

Unknown

Unknown

Substrates

InGaAs

Keywords

Notes

549

Disclaimer

I am sure there are papers I have not found. I am sure there is an occasional typo or omission in the database entries. I have hundreds of pre-2009 papers yet to add. As a result, the information provided is not perfect and not complete. Don't blame Plasma-ALD-Guy if the use of information on this site does not work out for you. If you know of publications I have missed or a database entry is wrong, send me an email at: plasma-ald-guy@plasma-ald.com

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