The Formation of an Almost Full Atomic Monolayer via Surface Modification by N2O-Plasma in Atomic Layer Deposition of ZrO2 Thin Films

Type:
Journal
Info:
Chem. Mater. 2009, 21, 4374-4379
Date:
2009-06-20

Author Information

Name Institution
Seok-Jun WonSeoul National University
Ju Youn KimSamsung Electronics Co.
Gyu-Jin ChoiSeoul National University
Jaeyeong HeoSeoul National University
Cheol Seong HwangSeoul National University
Hyeong Joon KimSeoul National University

Films





Plasma TiO2


Plasma TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage Lifetime
Analysis: I-V, Current-Voltage Measurements

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Silicon

Notes

733