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Fast PEALD ZnO Thin-Film Transistor Circuits
Type:
Journal
Info:
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 57, NO. 2, FEBRUARY 2010
Date:
2009-12-15
Author Information
| Name | Institution |
|---|---|
| Devin A. Mourey | The Pennsylvania State University |
| Dalong Zhao | The Pennsylvania State University |
| Jie Sun | The Pennsylvania State University |
| Thomas N. Jackson | The Pennsylvania State University |
Films
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Mobile Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: Custom
Substrates
| Cr |
| Al2O3 |
Notes
| Thermal Al2O3 films used for passivation. |
| Al2O3 patterned in 80C phosphoric acid. |
| ZnO patterned in dilute HCl. |
| 101 |