Publication Information

Title: Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition

Type: Journal

Info: Acta Materialia 61 (2013) 7660 - 7670

Date: 2013-09-05

DOI: http://dx.doi.org/10.1016/j.actamat.2013.09.003

Author Information

Name

Institution

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Stanford University

Films

Deposition Temperature = 300C

186598-40-3

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam

Images

TEM, Transmission Electron Microscope

FEI Titan S 80-300 TEM/STEM

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

FEI Titan S 80-300 TEM/STEM

Chemical Composition, Impurities

ELS, EELS, Electron Energy Loss Spectroscopy

Unknown

Breakdown Voltage

I-V, Current-Voltage Measurements

Unknown

Substrates

Silicon

Keywords

Notes

Nice breakdown theory section,

592

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