Publication Information

Title: Preliminary investigation of high-k materials - TiO2 doped Ta2O5 films by remote plasma ALD

Type: Journal

Info: Physics Procedia 32 (2012) 379-388

Date: 2012-06-30

DOI: http://dx.doi.org/10.1016/j.phpro.2012.03.572

Author Information

Name

Institution

Oxford Instruments

Oxford Instruments

Chinese Academy of Sciences

University of Liverpool

University of Liverpool

Oxford Instruments

Films

Deposition Temperature = 300C

546-68-9

69039-11-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000V

Refractive Index

Ellipsometry

J.A. Woollam M-2000V

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

Oxford Instruments Inca X-act model 51 EDX detector

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Optical Properties

Ellipsometry

Horiba Jobin Yvon UVISEL

Optical Bandgap

Ellipsometry

Horiba Jobin Yvon UVISEL

Unknown

Anneal

Unknown

Substrates

Silicon

Keywords

High-k Dielectric Thin Films

Doping

Notes

Oxford Instruments FlexAL PEALD TiO2 doped Ta2O5 high-k dielectric study.

149

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